Voltage-Induced Switching of Nanoscale Magnetic Tunnel Junctions
by Juan G. Alzate, Pedram Khalili Amiri, Pramey Upadhyaya, Sergiy S. Cherepov, Jian Zhu, Mark Lewis, Richard Dorrance, Jordan A. Katine, Juergen Langer, Kos Galatsis, Dejan Marković, Ilya Krivorotov, Kang L. Wang
Abstract:
We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show  10x reduction in switching energies (compared to STT) with leakage currents $< 10^5 A/cm^2$. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.
Reference:
J. G. Alzate, P. K. Amiri, P. Upadhyaya, S. S. Cherepov, J. Zhu, M. Lewis, R. Dorrance, J. A. Katine, J. Langer, K. Galatsis, D. Marković, I. Krivorotov, K. L. Wang, "Voltage-Induced Switching of Nanoscale Magnetic Tunnel Junctions," in Proceedings of the International Electron Devices Meeting (IEDM'12), pp. 29.5.1-29.5.4, December 2012.
Bibtex Entry:
@INPROCEEDINGS{Alzate2012:IEDM,
    author    = {Alzate, Juan G. and Amiri, Pedram Khalili and Upadhyaya, Pramey and Cherepov, Sergiy S. and Zhu, Jian and Lewis, Mark and Dorrance, Richard and Katine, Jordan A. and Langer, Juergen and Galatsis, Kos and Markovi\'{c}, Dejan and Krivorotov, Ilya and Wang, Kang L.},
    title     = {{Voltage-Induced Switching of Nanoscale Magnetic Tunnel Junctions}},
    booktitle = {Proceedings of the International Electron Devices Meeting (IEDM'12)},
    year      = {2012},
    month     = {December},
    pages     = {29.5.1--29.5.4},
    doi       = {10.1109/IEDM.2012.6479130},
    abstract  = {We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ~10x reduction in switching energies (compared to STT) with leakage currents $< 10^{5} A/cm^{2}$. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.},
    url       = {http://rdorrance.bol.ucla.edu/pdf/Voltage-Induced%20Switching%20of%20Nanoscale%20Magnetic%20Tunnel%20Junctions.pdf},
}
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