Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM
by Richard Dorrance, Juan G. Alzate, Sergiy S. Cherepov, Pramey Upadhyaya, Ilya Krivorotov, Jordan A. Katine, Juergen Langer, Kang L. Wang, Pedram Khalili Amiri, Dejan Marković
Abstract:
This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages  1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-$1F^2$ effective cell size.
Reference:
R. Dorrance, J. G. Alzate, S. S. Cherepov, P. Upadhyaya, I. Krivorotov, J. A. Katine, J. Langer, K. L. Wang, P. K. Amiri, D. Marković, "Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM," IEEE Electron Device Letters (EDL), vol. 34, no. 6, pp. 753-755, June 2013.
Bibtex Entry:
@ARTICLE{Dorrance2013:LED,
    author    = {Dorrance, Richard and Alzate, Juan G. and Cherepov, Sergiy S. and Upadhyaya, Pramey and Krivorotov, Ilya and Katine, Jordan A. and Langer, Juergen and Wang, Kang L. and Amiri, Pedram Khalili and Markovi\'{c}, Dejan},
    title     = {{Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM}},
    journal   = {IEEE Electron Device Letters (EDL)},
    year      = {2013},
    month     = {June},
    volume    = {34},
    number    = {6},
    pages     = {753--755},
    doi       = {10.1109/LED.2013.2255096},
    abstract  = {This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ~1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-$1F^{2}$ effective cell size.},
    url       = {http://rdorrance.bol.ucla.edu/pdf/Diode-MTJ%20Crossbar%20Memory%20Cell%20Using%20Voltage-Induced%20Unipolar%20Switching%20for%20High-Density%20MRAM.pdf}
}
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