Read-Disturbance-Free Nonvolatile Content Addressable Memory (CAM)
by Pedram Khalili Amiri, Richard Dorrance, Dejan Marković, Kang L. Wang
Abstract:
Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.
Reference:
P. K. Amiri, R. Dorrance, D. Marković, K. L. Wang, "Read-Disturbance-Free Nonvolatile Content Addressable Memory (CAM)," US Patent, US 20140071728 A1, March 2014. (Licensed to a startup MRAM company based in California)
Bibtex Entry:
@PATENT{Dorrance2014:US20140071728A1,
    author    = {Amiri, Pedram Khalili and Dorrance, Richard and Markovi\'{c}, Dejan and Wang, Kang L.},
    title     = {{Read-Disturbance-Free Nonvolatile Content Addressable Memory (CAM)}},
    year      = {2014},
    month     = {March},
    day       = {13},
    number    = {US 20140071728 A1},
    type      = {Patent},
    location  = {US},
    gpatentid = {US20140071728},
    abstract  = {Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.},
    url       = {http://rdorrance.bol.ucla.edu/pdf/US20140071728.pdf},
    comment   = {Licensed to a startup MRAM company based in California}
}
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